Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors

We report the performance of field-effect transistors (FETs), composed of monolayer of recently synthesized layered two-dimensional (2-D) MoSi
₂
N
₄
as channel material, using the first principles quantum transport simulations. The devices’ performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising 2-D materials-based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them is encouraging, and competitive to other logic alternatives.