An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment

In this work, an eco-friendly aqueous solution-processed ZrLaO dielectric is demonstrated for large-area application in the harsh radiation environment. Appropriate La doping (10% La) into ZrO
x
could suppress the formation of V
o
and improve the InO
x
/ZrLaO interface. The Zr
0.9
La
0.1
O
y
thin films remained stable under 144 krad (SiO
2
) gamma-ray irradiation, no distinct composition variation or property degradation were observed. The resistor-loaded inverter based on InO
x
/Zr
0.9
La
0.1
O
y
TFT demonstrated full swing characteristics with a gain of 13.3 at 4 V and remained 91% gain after 103 krad (SiO
2
) irradiation.