Flexible Ta2O5/WO3-Based Memristor Synapse for Wearable and Neuromorphic Applications

In this letter, Ta
₂
O
₅
/WO
₃
double-layer wearable memristor synapse has excellent recognition accuracy (97%) for just 12 epochs compared to the single-layer device (83%). The insertion of an ultra-thin WO
₃
layer modulates the oxygen vacancy distribution in Ta
₂
O
₅
and induces digital-to-analog switching behavior. Excellent AC endurance of (>10
⁹
cycles) under 2 mm extreme bending, a rapid speed (25 ns), reliable bending endurance for 10
⁴
cycles with 4 mm bending, stable retention (>10
⁶
s) up to 200°C, and water-resistant behavior are achieved. The potentiation, and depression having outstanding nonlinearity (0.64) is obtained. The Ta
₂
O
₅
/WO
₃
design is a promising candidate for wearable neuromorphic applications due to its wearability, flexibility, lightweight, low cost and environmental friendly fabrication.