MoS2 based CBRAM with Mo/Ti barrier layer for artificial synapse application

Effects of Mo/Ti barrier layer on improving resistive switching and neuromorphic characteristics have been evaluated on MoS
₂
based CBRAM devices for the first time. The Al/Cu/Ti/MoS
₂
/TiN device shows long program/erase endurance of >1.5 x 10
⁹
cycles at small pulse width of 100 ns. The operation current is 300 μA for the 9 x 9 cross-point memory and good synaptic characteristics are obtained.