The Effects of Variation in Geometry Parameters on Sub-50 nm Finfet and Their Direct Impact on Finfet Performance

Nowadays FinFETs are extremely targeted for various complex circuits applications which are meeting the demands of various electronic devices for improvement in performance and decreasing the power consumption. This paper briefly explains the impact of HFINHFIN (Fin height)and WFIN (Fin Width) variations of finfet on various performance parameters of device. Highly depending on W/H ratio , the device is divided into different devices, i.e., FinFET, Trigate, and Planar MOSFET. Various device geometry parameters on such as Vth , Ion, Ioff , Pd, gm, gd, early voltage, Voltage gain and high-frequency performances as Cgg (capacitance of gate) ,fT, R0 is demonstated with simulation results which are supporting the facts. The simulated results shown in this paper supports device engineers to design trigate devices as per the need.