HfO2-Based Highly Stable Radiation-Immune Ferroelectric Memory

In this letter, HfO₂-based ferroelectric random access memory (FeRAM) with metal–insulator–metal structure is studied for the first time under radiation conditions. Y-doped HfO₂-based FeRAM devices show high immunity to ⁶⁰Co $\gamma $ ray radiation. Basic FeRAM parameters, such as leakage current, permittivity, remanent polarization, endurance, and fatigue, show almost no degradation after $\gamma $ ray radiation with a total dose as high as 12.96 Mrad (SI). Furthermore, the ferroelectric hysteresis loops show no distortion after radiation. The high stability of Y-doped HfO₂ FeRAM devices under radiation demonstrates their great potential for nuclear and aerospace applications.