Large-Scale Interconnection for High-Power Diamond Devices

Scaling the output power of hydrogen-terminated diamond (H-diamond) transistors is critical for their practical applications. While H-diamond exhibits superior material properties, individual device power output remains a key limitation. This paper reports on a parallel-integrated multi-transistor architecture for H-diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) designed to enhance output power. Devices incorporating 30 parallel-connected transistors were fabricated and characterized. These integrated devices achieved a DC output power of 9.9 W, representing an approximate 20-fold increase over a single reference transistor (0.5 W). The findings confirm the effectiveness of the parallel integration approach, establishing a viable pathway for realizing high-power H-diamond components.