Experiment Investigation on La2O 3 Dipole-Last Cap-Less VFB Tuning Technology Based on Nitrogen Atmosphere

The effect of post-deposition anneal (PDA) temperature on flat-band voltage (VFB) modulation using the La dipolelast cap-less technique is investigated. The results show that increasing the PDA temperature enhances VFB modulation, reduces the equivalent oxide thickness (EOT), and achieves a 40 % reduction in interface trap density (Dit). An Laassisted oxygen migration model, supported by energydispersive spectroscopy (EDS) and trap/detrap electron density (Not) results, is proposed, offering a promising method for multiple threshold voltage (multi-Vt) formation.