Halogen Free Low Temperature ALD Mo-based Films for Interconnects Applications

Molybdenum-based films were synthesized by low temperature atomic layer deposition (ALD) from different organometallic halogen free Molybdenum precursors. The film’s average composition was investigated and correlated with their nanoscale structures and electrical transport properties. A high work function N-rich MoN film with low carbon contamination was demonstrated in comparison with MoC/MoCN films with low resistivity. The precursor composition dependence of film’s properties leads to a low resistivity MoC film as well as selective deposition of Mo films on metallic substrates.