Fabrication Techniques and Material Selection for Gate-All-Around FET (GAAFET) in Advanced Nanoelectronics

In the relentless pursuit of miniaturization and heightened performance in nanoelectronics, the Gate-All-Around Field-Effect Transistor (GAA FET) has emerged as a promising contender, offering a transformative leap in transistor technology. This research paper delves into the intricate realm of GAA FETs, focusing on the critical aspects of fabrication techniques and material selection essential for their realization. The novelty of this work lies in its comprehensive exploration of GAA FET architecture, encompassing the elucidation of complex structures and working principles, including innovative variations such as nanowire and nanosheet configurations. Furthermore, the paper meticulously examines state-of-the-art fabrication techniques, shedding light on nanofabrication processes and equipment pivotal in GAA FET production. Material selection criteria, covering both traditional and emerging materials, are thoroughly explored, highlighting their pivotal role in GAA FET design. Additionally, the research scrutinizes characterization and testing methodologies, providing insights into performance evaluation. By identifying current challenges and proposing potential solutions, this paper contributes to the advancement of GAA FET technology, shaping the trajectory of nanoelectronics. Through its comprehensive exploration, this work aims to provide valuable insights and pave the way for future advancements in the field.