Impact of Circuit Mismatches and Parasitic Parameters on Paralleling 650-V E-Mode GaN HEMTs | IEEE Conference Publication | IEEE Xplore

Impact of Circuit Mismatches and Parasitic Parameters on Paralleling 650-V E-Mode GaN HEMTs


Abstract:

In the high-power applications, paralleling multiple and small die size devices is commonly accepted instead of single large die size device due to the yield and reliabil...Show More

Abstract:

In the high-power applications, paralleling multiple and small die size devices is commonly accepted instead of single large die size device due to the yield and reliability limitation. This paralleling methodology has been mature for the Si and SiC devices. However, the fast switching speed of GaN high electron mobility transistors (GaN HEMTs) makes it very sensitive to parasitic parameters and thus paralleling GaN becomes a challenging topic. In this paper, the impact of circuit mismatches and parasitic parameters on paralleling 650-V GaN enhancement-mode (E-mode) HEMTs with an analytical model is proposed. Furthermore, the design consideration and the most important parasitic parameters with asymmetric layout are presented to achieve a reliable switching process. The importance of parasitic parameters is different with or without the current shunt resistance. The proposed layout is modeled in Ansys Q3D to extract the parasitic parameters. The Ltspice simulation and double pulse test (DPT) experiments at 400V/20A are done to verify the proposed layout of paralleling GaN HEMTs.6
Date of Conference: 17-20 May 2024
Date Added to IEEE Xplore: 02 July 2024
ISBN Information:
Conference Location: Chengdu, China

I. Introduction

In recent years, the emergence of GaN HEMT has widely used in the high-density and high-efficiency applications like fast charger and data center, due to the low on-resistance and high switching speed compared with Si MOSFET [1]. However, the yield and reliability of large die size GaN is still limited considering the relative immature GaN-on-Si process. Therefore, paralleling GaN HEMTs are needed for high power applications. The extremely fast switching speed (dv/dt may reach 100 V/ns) makes GaN HEMTs very sensitive to parasitic parameter and thus difficult in paralleling.

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References

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