Comparative Analysis of Laser Parameters effect on Laser Splash Performance During Wafer Stealth Dicing

Stealth Dicing (SD) is becoming an increasingly popular die singulation method with the growing need for thinner dies and faster wafer processing cycle times. However, a key defect formed as a result from SD is laser splash. This poses potential electrical and reliability failures. It is also rarely studied. In addition, legacy generations of SD platforms utilize a laser wavelength which translates to energy higher than the band gap energy of silicon, which further increases laser refraction and thus, the risk of laser splash induced. Thus, this paper explains with detail the mechanism of laser splash, characterize the parameters which affect the intensity of laser splash and propose theoretical parametric limits for each of these parameters based on various dicing scribe widths.