Realization of Optically Stimulated Synaptic Memristor Devices Using MoO3

This letter presents the design, fabrication and testing of the optically stimulated synaptic memristor devices using molybdenum trioxide (MoO3). The microfabrication processed devices were tested from 2” silicon wafer, which confirms the process scalability. The memristors were stimulated for the broadband wavelength spectrum. Optically stimulated synaptic memristor devices shown maximum switching characteristics and response towards 360 nm wavelength. The optically stimulated synaptic memristor devices offer an on/off ratio of
$\sim 10^{3}$
and a retention time of
$\sim 4\times 10 ^{3}$
seconds. Moreover, the devices showed the paired pulse facilitation index (PPF) of 349 % at 360 nm. The fabricated devices are having the light sensing and data storage capabilities at room temperature. Therefore, these devices are suitable candidate to realize integrated sensing-computing-memory (ISCM) functions.