Indium-Tin-Oxide Thin-Film Transistors With High Field-Effect Mobility (129.5 cm2/V⋅s) and Low Thermal Budget (150 °C)

In this letter, we demonstrate high performance Indium-Tin-Oxide thin-film transistors (ITO TFTs) with low thermal budget of process temperature less than 150 °C and a record high peak field-effect mobility (
$\mu _{\text {eff}}{)}$
of 129.5 cm2/
$\text{V}\cdot \text{s}$
among any kind of oxide semiconductor (OS) based TFTs with sub-5 nm channel thickness. In addition, the TFTs realized in this work also achieve decent features in terms of other key figure-of-merits, such as high on/off ratio, low drain-induced-barrier-lowering (DIBL), and a small frequency dispersion of the capacitance-voltage (C-V) characteristics. With further benefit of an raised S/D structure and by scaling the channel length (
${L}_{\text {CH}}{)}$
of the device down to 50 nm, it presents an extremely high on-state current (
${I}_{\text {on}}{)}$
of
$1260.9 ~\mu \text{A}/\mu \text{m}$
at a gate overdrive voltage
${V}_{\text {ov}}$
of 4 V and a moderate drain to source voltage
${V}_{\text {DS}}$
of 0.5 V as well as one of the best peak extrinsic transconductance (
${G}_{\text {m, {ext}}}{)}$
of
$458 ~\mu \text{S}/\mu \text{m}$
at a
${V}_{\text {DS}}$
of 0.5 V among OS-TFTs.