High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric

In this work, high-performance top-gate indium-tin-oxide (ITO) transistors with high carrier mobility of 60 cm2/
$\text{V}\cdot \text{s}$
have been successfully demonstrated using optimized atomic layer deposited (ALD) La-doped HfO2 as the top-gate dielectric. The scaled device with a channel length of 50 nm exhibits a high current on/off ratio over
${7} \times {10} ^{{9}}$
owing to the excellent electrostatic control. A maximum output current of
$1680~\mu \text{A}/\mu \text{m}$
with a remarkable carrier velocity of
${0}.{87} \times {10} ^{{7}}$
cm/s has also been achieved due to the record low contact resistance of
$180~\Omega \cdot \mu \text{m}$
. The on- and off-state performance of our ITO transistors are the highest among previous top-gate amorphous oxide semiconductors.