Artificial Synapse Based on Vertically Aligned Nanocomposite Ferroelectric Thin Films

Ferroelectric memristors play a critical role in the hardware implementation of artificial synapses and neuromorphic computing because of their reliable nonvolatile storage and adjustable resistance states capabilities. In this study, we demonstrate how a silicon-based vertically aligned nanocomposite structure of Pd/(BaTiO3)0.6(CeO2)0.4/La0.7Sr0.3MnO3/SrTiO3/Si can be used to realize a robust electronic synapse. The results show that the electronic synapse has the characteristics of tunable resistance states that can imitate synaptic behaviors, such as spike-timing-dependent plasticity, paired pulse facilitation, and paired pulse depression. Moreover, the device exhibits good conductance modulation capability, which may provide feasibility in the field of image processing and neural computing.