Study the C-V behavior of cesium-lead halides perovskite solar cells under various simulation parameters

Capacitance response of perovskite solar cells (PSCs) can be oppressed to deduce underlying physical mechanisms, both in the materials at external interfaces and in bulk materials. Accordingly, this paper investigates the Capacitance-Voltage (C-V) characteristic curves of cesium lead halides (CsPbX
3
:X = I, Br, or Cl) used as an active layer in PSCs. The SCAPS-1D simulator harnessed the actual device (CsPbX
3
:X = I, Br, or Cl) with material parameters from previous experimental work. Three main simulation parameters were investigated: the thickness of the active layer, the doping, and the defects impacts.