Fabrication of Nanoimprint-Lithography masters for optical nano gratings

This paper describes the process chain for fabrication of 8" Nanoimprint-Lithography (NIL) masters with optical nano gratings by the use of an i-line wafer stepper and reactive ion etching (RIE) for NIL master replication. Process parameters for lithography and etching are evaluated to achieve NIL masters with a nanostructure homogeneity of 400 nm lines and spaces (800 nm period) in different etch depths with an aspect ratio up to 5:1 (2000 nm etch depth) over an 8" wafer. During evaluation, the RIE processes of Si and SiO
2
are investigated for the aimed etch depths. Afterwards, the NIL masters were used for multiple replications using SmartNTL™ technology from EV Group. The corresponding results are shown in this paper.