Proven Power Cycling Reliability of SmartSiC(TM) Substrate for Power Devices

The Smart Cu(TM) technology enables the integration of a high-quality SiC layer transfer for device yield optimization, combined with a low-resistivity handle wafer (below 5mOhm.cm) to lower device conduction and switching losses. More than 550000 cycles without any failure have been demonstrated during Power Cycling Tests, with a temperature swing of 120K. Evolution of thermal resistance is within the specification of AQG324 standards (2021 revision). This test is a validation of the reliability of our SmartSi(TM) engineered substrate.