Charge storage characteristics in Ge/Si hetero-nanocrystals based MOS memory structure

The simulation and experimental measurement of the charge storage characteristics in Ge/Si hetero-nanocrystals based MOS memory structure have been performed. Owing to the Ge/Si hetero-energy bands, comparing with Si nanocrystal memory, the retention time increases remarkably. The trade-off between the speed programming and the long retention could be solved efficiently, and the performance of the device is substantially improved.