A new method for fixed oxide charge determination using a dual-gate MOS capacitor

A new method for fixed oxide charge determination at the silicon-silicon-dioxide interface is presented. It is based on high-frequency C-V measurements of a dual-gate MOS capacitor. Using this technique the fixed oxide charge can be accurately without knowledge of the work-function difference by means of one simple measurement. Due to its simplicity and ease of automation it can be applied to characterization and process optimization of MOS technology.<
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