Accurate Picture of Cycling Degradation in HfO2-FeFET Based on Charge Trapping Dynamics Revealed by Fast Charge Centroid Analysis

We establish an accurate picture of cycling degradation in HfO
2
-FeFET based on the dynamics of various kinds of trap charges (e:electron/h+:hole, stable/unstable, program-induced/read-induced) revealed by fast charge centroid analysis. A part of e trapped at HfO
2
/SiO
2
interface, which is unrelated to ferroelectricity and unstable before the cycling degradation, becomes unrecoverable after cycling. By calculating its impact on Vth, of FeFET and clarifying the behavior of spontaneous polarization during cycling, we found that the amount of h+-trapping increases with cycling. This additional h+-trapping, which is accompanied with erase operation and disappears with program operation, is the most critical factor for Vth, window narrowing and accelerated by cycling-induced unrecoverable trapped e. Not only e-trapping but also its stabilization should be suppressed for higher endurance.