Terahertz Imaging Based on Si:P Blocked Impurity Band Detector

Terahertz (THz) detection and imaging technology play a fundamental and critical role in promoting the development of terahertz technology. Terahertz imaging has promising applications in nondestructive examination, security check, cancer diagnosis, radar detection, astronomical observation and so on1. However, the detection sensitivity and imaging resolution are not satisfactory enough at present. Due to the serious absorption of water vapor, high-performance detector is required for the THz imaging. In general, the THz detectors such as Schottky barrier diode, Golay cell, and field effect transistor are convenient for use, but difficult to form large-scale array integration for the application of THz imaging. The superconductor-insulator-superconductor mixer and transition-edge sensor have excellent sensitivity, but have to be operated at extremely low temperature below 0.3K, which limit its application in THz imaging.