High-efficiency, 10 GHz bandwidth resonant-cavity-enhanced silicon photodetectors operating at 850 nm wavelength

We present RCE Si pin photodetectors capable of quantum efficiency of /spl sim/40% and bandwidth of /spl sim/10 GHz at 850 nm with a buried distributed Bragg reflector fabricated by means of a double-SOI technique. The reflecting wafers are commercially reproducible and have single crystalline silicon device layers for fabricating silicon RCE photodiodes with high bandwidth efficiencies as well as low dark current. These wafers are well suited for VLSI integration and are compatible with standard CMOS processing making them ideal for monolithic integration of receiver circuits with photodetectors.