Mist chemical vapor deposited-Al2O3/AlGaN interfacial characterization for GaN MIS-HEMTs

Amorphous Al2O3 gate insulator on AlGaN/GaN structure have been deposited by cost-effective mist chemical vapor deposition (mist-CVD) technique. The properties of deposited mist-Al
2
O
3
gate insulators are comparable to those reported for high-quality amorphous Al
2
O
3
films deposited by atomic layer deposition (ALD) method. In addition, we have fabricated AlGaN/GaN metal–insulator–semiconductor (MIS) diodes using Al
2
O
3
gate insulator deposited by mist-CVD. We obtained practically hysteresis-free with spill-over behavior in capacitance–voltage (C–V) characteristics from the fabricated mist-Al2O3 MIS diodes suggesting high interfacial quality of the mist-Al
2
O
3
/AlGaN interface.