Using High Aspect Ratio AFM Probe for Digital Twin Development of SiC FEA

The nanopillar growth method of deposition of metal-organic molecules by a sharply focused electron beam is used to form high aspect ratio AFM probe. It is applied to AFM-based digital twin development of two-tier silicon carbide field emission array (FEA), made in SPETU LETI by a two stage reactive ion etching technique in a fluoride atmosphere with high-density emission tips (of the second stage) and vertically oriented surface morphology. In digital twin approach the experimental information describing the detailed surface morphology are represented by a numerical multiscale simulation.