Position-controlled quantum emitters with reproducible emission wavelength in hBN

In the context of photonic quantum information science, hexagonal boron nitride (hBN) has recently emerged as a very promising material. The bidimensional character of hBN renders it attractive for the realisation of heterostructures and integrated photonic devices. Moreover, this wide-gap material has been recently shown to host colour centres with appealing optical properties in the red and near infrared regions [1] . However these deep defects suffer from the wide distribution of their emission wavelength and a random spatial location [2] , [3] . These limitations hinder the scalability of the system for applications.