Semiconductor and photoconductive GaN nanowires and nanotubes

Summary form only given. It is difficult to control carbon nanotube chirality, which directly affects electronic performance. Preliminary results show that unlike carbon nanotubes, conductive properties of GaN are more or less independent of chirality and diameter. They are single crystal and not single or multi-wall. Further, both p and n-type GaN can be made, and its melting temperature is >1400/spl deg/C. Thus GaN nanotubes could be tuned for use in molecular electronic devices.A significant increase in current at the same bias voltage when UV light is shined on the device may be the first demonstration of photoconductivity in a nanowire, and suggests the possibility of using them as opto-electric switches and transistors.