Enhancement of Electric Field Sensitivity in Graphene for Early Lightning Prediction

We demonstrate a highly sensitive electric field sensor based on graphene which can detect both positive and negative electric fields as lows as 250 V/m. The detailed experimental analysis using pristine graphene and hBN encapsulated graphene with hBN of various thicknesses reveals that the traps at the SiO
2
/Graphene interface facilitate the sensing rather than the traps at the SiO
2
/Si interface as reported earlier [1]. We also show that the hBN encapsulated graphene devices showed an enhancement in electric field sensitivity of 100% compared to bare graphene devices.