Improved performance of GaN-based LEDs with PVD AlN

The crystal quality of GaN based light emitting diodes (LEDs) with sputtered physical vapor deposition (PVD) aluminum nitride (AlN) nucleation layers were investigated. It was found that the crystal quality in terms of defect density and X-ray diffraction linewidth was greatly improved. The light output power and reverse bias voltage of leakage current were increased on LEDs with PVD AlN nucleation layers.