A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory

A Ferroelectric Analog Non-Volatile Memory based on a WO
_x
electrode and ferroelectric HfZrO
₄
layer is fabricated at a low thermal budget (~375°C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <; 10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.