Enhanced Resistance to Ablation by Infusion and In-Situ Growth of SiC on Graphite Using Polymer Infiltration Pyrolysis

Polymer infiltration pyrolysis (PIP) technique was used to synthesis the SiC infused graphite using Polycarbosilane (PCS) as a ceramic precursor, this methodology provided SiC infused top layer on graphite and in-situ growth of SiC within the graphite structure. Ablation testing showed a weight loss of 1.39 ×10
^-3
g/s for the treated graphite, reduced by 47.6% compared to un-treated graphite along with a 31.8% decrease in the back-plate temperature. The reduction in weight loss is attributed to the transformation of SiC to the glassy SiO
₂
layer which plays an important role in reduced oxygen permeability by sealing the cracks formed on the exposed layer, hence increasing the ablation resistance. SEM micrographs confirm an infused SiC top layer on graphite. EDS characterization confirms the presence of Si infusion in-depth in the graphite structure.