An Empirical Nonlinear Model for HEMT Devices based on the Gudermannian function

In this paper, an empirical nonlinear model for GaAs pHEMT device is presented. The proposed model is capable of reproducing the global current-voltage (I-V) device behavior under the static DC and dynamic pulsed operating conditions with an excellent fitting in all I-V regions. In this model, the parameter extraction procedure commences with the direct fitting of third order derivative in the I-V curves, and the proposed model can accurately reproduce second and third order derivatives, which is adequate for describing the nonlinear performance of these devices. Compared with other well-known models, the proposed model agrees well with the measured data.