3.3 kV Class 4 H-SiC Double-Implanted MOSFET With Excellent Radiation Hardness Against Gamma Rays Using Counter-Doped Junction Termination Extension

In this letter, we report experimental results for a 3.3 kV class 4H-SiC double-implanted MOSFET (DMOSFET) that provides excellent radiation hardness against gamma rays using the counter-doped junction termination extension technique. At a total dose of 700 kGy at room temperature, the ON-state current is only degraded by 15%, and the breakdown voltage remains above 3.5 kV with a clear avalanche feature. In contrast, Si insulated gate bipolar transistors (IGBTs) are not able to maintain both its forward and reverse specifications, even at 1 kGy.