High quality gate dielectrics grown by rapid thermal processing using split-N2O technique on strained-Si/sub 0.91/Ge/sub 0.09/ films

Thermal stability and strain relaxation temperature of strained Si/sub 0.91/Ge/sub 0.09/ layers has been investigated using double crystal x-ray diffraction (DCXRD). High quality gate oxynitride layers rapid thermally grown on strained Si/sub 0.91/Ge/sub 0.09/ using N/sub 2/O and the split N/sub 2/O cycle technique below the strained relaxed temperature is reported. A positive fixed oxide charge density was observed for N/sub 2/O and split-N/sub 2/O grown films. The O/sub 2/ grown films exhibit a negative fixed oxide charge. The excellent improvements in the leakage current, breakdown field and charge-to-breakdown value of the N/sub 2/O or split-N/sub 2/O grown films were achieved compared to pure O/sub 2/ grown films.