Epitaxial Gd/sub 3/(GaSc)/sub 5/O/sub 12/:Er and CN:Er films in active medium for 1.5-/spl mu/m laser

Summary form only given. The studied Gd/sub 3/(Ga/sub 2/Sc)/sub 5/O/sub 12/:Er films were grown using the method of liquid-phase epitaxy on pure Gd/sub 3/Ga/sub 5/O/sub 12/ substrates. The employed films, which differed in the number of Gd/sup 3+/ ions, are replaced by Er/sup 3+/ ions. The Sc/sup 3+/ ions were used to compensate the size of the elementary crystal cell of the film and to bring the size of the elementary cell in correspondence with the size of the substrate. An influence in studied of electromagnetic radiation on epitaxial structure growing processes. High power xenon lamp, pulse and continuous lasers were used in experiments on CN:Er films growing. The model of processes on the crystallization surface is considered and the necessity to take defects kinetics into account when analyzing photostimulated epitaxy is shown. Spectral-luminescent properties of Gd/sub 3/(GaSc)/sub 5/O/sub 12/ and CN films doped with Er/sup 3+/ ions have been studied.