Optimization of source material for in-situ Arsenic doping via vapor transport deposition of CdTe films

In-situ doping of CdTe/CdSeTe films with arsenic is performed using pre-doped source material prepared by high pressure Bridgman (HPB) melt growth. Arsenic level in the source material is varied from 10
¹⁸
-10
²⁰
cm
^-3
. Correspondingly, dopant incorporation in the films prepared using vapor transport deposition (VTD) varied from 3×10
¹⁷
cm
^-3
-1×10
¹⁸
cm
^-3
. In this range, dopant activation is found to inversely correlate with the dopant incorporation, suggesting compensation. The results from this study indicate film properties can be adjusted by source material.