An amplifier design for MMDS application at 12 GHz using neural network transistor noise model

The modeling procedure of a single-stage amplifier for MMDS application at 11.7-12.5 GHz is presented in this paper. A neural network noise model for the Hewlett Packard pseudomorphic HEMT ATF-36163 is used for simulation purposes. Designing results at a center frequency of the required frequency range 12.1 GHz obtained by using standard microwave circuit simulator Libra are: gain 10.9 dB, noise figure 1.23 dB, input return loss -12.8 dB and output return loss -12 dB. Noise parameter characteristics (F/sub min/, r/sub n/, /spl Gamma//sub opt/) of the amplifier simulated for neural network transistor noise model are compared with the ones obtained for transistor's S and noise parameters available in the manufacturer's catalog. Good agreement can be seen for all characteristics.