Si Nanoribbons based High Performance Printed FETs using Room-Temperature deposited Dielectric

This paper presents the fabrication and characterization of transfer printed Si nanoribbons (NRs) based field effect transistor (NRFETs). The critical steps such as high-k gate dielectric (silicon nitride (SiN)) were carried out at room temperature (RT), by using inductively coupled plasma chemical vapour deposition (ICP-CVD) method. The presented device exhibit mobility (~ 656 cm
²
V
^-1
.s
^-1
) and On/Off ratio (>106) at par with conventional Si devices. The fabricated flexible Si NRFETs were evaluated under multiple bending cycles (~100) and the performance was found to be stable. The presented approach demonstrates the potential for direct printing of high performance flexible electronics.