Soft breakdown triggers for large area capacitors under constant voltage stress

This work quantitatively compares breakdown triggers for constant voltage stress of large area NMOS capacitors (up to 10 mm/sup 2/) with 1.8 to 12 nm gate oxide thickness (with negative V/sub G/). We conclude that in the studied range, breakdown is identified more reliably with a current step trigger than through increased current fluctuation (RMS). We also present data filtering algorithms that significantly enhance the ratio between the breakdown signal and background noise level.