A Novel Structure of the Silicon Transient Voltage Suppressor with Negative Differential Resistance

The article describes the unique structure of a silicon transient voltage suppressor that has a section of negative differential resistance. The negative differential resistance effect is achieved due to the dependence of the breakdown voltage of the p-n-junction with the tunneling breakdown mechanism on its area. To protect against overvoltage in alternating current circuits, the article investigates the counter inclusion of two developed structures.