Millimeter-wave attenuation measurements in layer structured semiconductor waveguides

Using an optoelectronic technique, we have measured the attenuation of millimeter-waves propagating in Si, SOS, and GaAs/AlGaAs/GaAs epilayer waveguides illuminated by 1,060 nm and 532 nm wavelength laser pulses. A comparison with theoretical calculations and a discussion of design criteria to obtain a pure phase shifter are given.