RF power LDMOSFET on SOI

We have fabricated a SOI laterally diffused MOSFET that is designed for use in radio frequency power amplifiers for wireless system-on-a-chip applications. The device is fabricated on a thin-film SOI wafer using a process that is suitable for integration with SOI CMOS. An under-source body contact is implemented and both a high breakdown voltage and a high f
_T
are attained. The device performance compares favorably with bulk silicon rf power MOSFETs. For a gate length of 0.7 μm the device f
_T
is 14 GHz, f
_max
is 18 GHz, and the breakdown voltage approaches 25 V.