Behavior analysis of the IGBT in ZCS commutation based in a soft modeling concept

This work presents a study of the insulated gate bipolar transistor (IGBT) behavior in ZC soft switching mode. This analysis is based on a soft modeling concept of power electronics devices, which gives important knowledge of the semiconductor, normally not accessed by experimental means and addressed to the circuit users. For example the carrier concentration at emitter end of the base, the instantaneous excess charge, the MOS and bipolar current and voltage distributions are available. A simple analytical model (soft modeling) taking into account the essential physical phenomena has been developed for the IGBT in MATLAB, as a compromise between the ideal switch and the complex models applied to components design. The simulation results obtained with soft modeling will be used to study the commutation behavior of the IGBT under zero current switch conditions.