The Radiation Hardening Methods for Blocks of Memory Integrated Circuits

This paper presents designs of the buffer, row select signal generator, and power-on reset blocks for radiation-hardened static random-access memory. Simulation results show that the double buffer with 800 Ohm resistors added has the best radiation hardening among other configurations of buffers. Designed blocks were tested for tolerance to radiation-induced Single-Event Transient caused by a charged particle with Linear Energy Transfer 100 MeV*cm2/mg. Presented blocks showed better results compared to other conventional designs of these blocks.