Microwave performance of power MOSFETs on SOI substrates

This paper presents the first results of lateral SOI power MOSFETs for RF applications in a modified 1.2-/spl mu/m CMOS technology. Fabricated 30-V devices achieved an f/sub T/ of 6.9 GHz and an f/sub max/ of 10.1 GHz. Model parameters were extracted, and a comparison of the measured and modeled results demonstrates a reasonable match. A Class A RF amplifier was also constructed and measured. It yielded an efficiency of 25% (identical to a similarly rated bulk LDMOSFET) with a maximum power output of 0.115 W.