Doping profiles of Schottky diodes for nonlinear transmission lines

Semiconductor Schottky diodes are key elements in nonlinear transmission lines (NLTL) with their doping profiles optimized for performance. Several reports have used doping profiles other than homogeneous doping. However, to date, no work has been reported on the direct comparison of those different doping compositions. In this report, we present a complete study on composition profiles (homogeneous, double homogeneous, pulse, exponential and gaussian doping profiles) with GaAs as the semiconductor material of choice. With our analytical diode model originally demonstrated for NLTL on silicon substrates, the diode maximum value of cutoff frequency was achieved by varying parameters such as the doping concentrations and layer thicknesses while keeping constant the breakdown voltage and capacitance swing.