TM mode gain enhancement in GaInAs-InP lasers with tensile strained-layer superlattice

A novel tensile strained barrier (TSB) structure is proposed as the active layer to enhance the transverse-magnetic (TM) mode gain in long wavelength laser diodes. The band diagram of the TSB structure is described theoretically and experimentally. The gain difference between transverse-electric (TE) and TM modes is discussed for layers with various strain values and well layer thicknesses. The characteristics of TM-mode enhanced devices are reported as applications of the mode gain control using the TSB structure. In Ga/sub 0.27/In/sub 0.53/As-Ga/sub x/ In/sub 1-x/As tensile strained layer superlattice structures, controllability of a mode gain difference is achieved by changing the strain value and/or thickness of wells.<
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