Graphitic Carbon Nitride/Polyvinylpyrrolidone Composite Dielectric for Low-Voltage Flexible InZnO Thin Film Transistor Grown on a Polyethylene Terephthalate Substrate

The aqueous-solution-processed graphitic carbon nitride/polyvinylpyrrolidone (C
₃
N
₄
/PVP) composite dielectric membrane exhibits a large specific gate electric-double-layer capacitance of 2.06 μF/cm
²
at 20 Hz. The indium zinc oxide (IZO) thin film transistor (TFT) fabricated on the polyethylene terephthalate (PET) substrate exhibits good electrical properties and high stability by using composite dielectric as gate dielectric. Flexible IZO-TFT has a low threshold voltage of 0.18 V, a large field effect mobility of 71.1 cm
²
V
^-1
s
^-1
, and a low subthreshold swing of 129 mV/decade. Moreover, it exhibits good stability at different bending radii and bending times. Finally, an inverter with a maximum voltage gain of 4.2 is obtained on basis of the flexible IZO TFT when V
_DD
= 1 V. These flexible oxide-based TFTs obtained using C
₃
N
₄
/PVP can be potentially applied in portable electronics with low power consumption.