Materials growth and device characterization of InAs quantum dot lasers

Summary form only given. A new semiconductor laser design name has been proposed-the dots-in-a-well (DWELL) laser. Previous InGaAs QD laser research has described the use of InGaAs layers with various indium compositions around the dots. In this presentation, a systematic study of the DWELL approach is described. In the first part, the properties of InAs QD's grown by molecular beam epitaxy (MBE) in narrow, pseudomorphically strained InGaAs QW's are reported.